shantou huashan electronic devices co.,ltd . applications npn epitaxial darlington tran sistor. high dc current gain. monolithic construction with built-in base-emitter shunt resistors. absolute maximum ratings t a =25 electrical characteristics t a =25 symbol characteristics min typ max unit test conditions bv cbo collector-base breakdown voltage 100 v i c =1ma, i e =0 bv ceo collector-emitter breakdown voltage 100 v i c =5ma, i b =0 h fe *dc current gain 1000 v ce =3v, i c =0.5a v ce(sat1) *collector- emitter saturation voltage 2.0 v i c =3a, i b =12ma v ce(sat2) *collector- emitter saturation voltage 4.0 v i c =3a, i b =20ma v be(on) *base-emitter on voltage 2.5 v v ce =3v, i c =3a i ceo collector cut-off current 0.5 ma v cb =50v, i b =0 i cbo collector cut-off current 0.2 ma v cb =100v, i e =0 i ebo emitter cut-off current 2.0 ma v eb =5v, i c =0 cob output capacitance 200 pf v cb =10v, i e =0 f=0.1 mhz * pulse test pw 300 sduty cycle 2% t stg storage temperature -55~150 t j junction temperature 150 p c collector dissipation tc=25 65w p c collector dissipation ta=25 2w v cbo collector-base voltage 100v v ceo collector-emitter voltage 100v v ebo emitter-base voltage 5v i c collector current dc 5a i c collector current pulse 8a ib base current 120ma 1 D base b 2 D collector c 3 D emitter e to-220 HP122 npn s i l i c o n t r a n s i s t o r
shantou huashan electronic devices co.,ltd . HP122 npn s i l i c o n t r a n s i s t o r
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